INA5002AC1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INA5002AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
2.8
INA5002AC1 is a silicon PNP epitaxial transistor designed for
0.65 1.5 0.65
relay drive or Power supply application.
FEATURE
・Super mini package for easy mounting
・High voltage V_CEO=-60V
・High collector current I_C=-3A
・Low collector saturation voltage
(V_{CE（sat）}<-0.6V_max；I_C=-3A、I_B=-300mA)
①
②
③
UNIT：mm
APPLICATION
DC/DC convertor, Relay drive, Moter drive
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CEO Collector to Emitter voltage
V_EBO
Emitter to Base voltage
V_CBO Collector to Base voltage
I_C
Collector current
I _CM
Peak collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
RATING
-80
-6
-60
-3
-6
200
＋150
-55～＋150
UNIT
V
V
V
A
mW
℃
℃
MARKING
Type Name
AEK
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CBO
V_(BR)EBO
V_(BR)CEO
I_CBO
I_EBO
ｈ_ＦＥ
V_CE(sat)
f_T
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
I _C=-100μA，I _E=0mA
I _E=-100μA，I _C=0mA
I _C=-1mA，R _BE=∞
V_CB=-60V，I _E =0mA
V_EB=-4V，I _C=0mA
V_CE=-2V，I _C=-0.5A
I _C=-3A，I _B=-300mA
V_CE=-5V，I _E=100mA，f=100MHz
V_CB=-10V，I _E=0mA，f=1MHz
LIMITS
MIN TYP MAX
-80 -
-
-6
-
-
-60 -
-
-
- -1.0
-
- -1.0
100 - 300
-
- -0.5
- 150 -
-
25
-
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION