INA5001AC1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type)

TENTATIVE
This is not a final specification.
Some parameters are subject to change.
DESCRIPTION
INA5001AC1 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for relay draive or Power supply application.
.
FEATURE
●Super mini package for easy mounting
●Low VCE(sat) VCE(sat)=-0.5 V max(@IC=-500mA/IB=-50mA)
●High collector current IC=-1A
●High voltage VCEO=-50V
〈SMALL-SIGNAL TRANSISTOR〉
INA5001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
OUTLINE DRAWING
2.5
0.5
1.5 0.5
Unit：ｍｍ
①
②
③
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
MAXIMUM RATINGS（Ta=25℃）
Symbol
V_CBO
V_EBO
V_CEO
IC
ICM
PC
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
-50
V
-5
V
-50
V
-1
A
-2
A
200
mW
＋150
℃
-55～＋150 ℃
JEITA：SC-59
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
I _C=-10μA , I _E=0
I _E=-10μA , I _C=0
I _C=-1mA ,R _BE=∞
V _CB=-50V, I _E=0mA
V _EB=-5V, I _C=0mA
V _CE=-4V, I _C=-0.1A
I _C=-500mA ,I_B=-50mA
V _CE=-2V, I _E=500mA
V _CB=-10V, I _E=0mA,f=1MHz
Limits
Unit
Min Typ Max
-50
-
-
V
-5
-
-
V
-50
-
-
V
-
-
-0.1 uA
-
-
-0.1 uA
160
-
380
-
-
-0.5
V
-
120
-
MHz
-
12
-
pF
ISAHAYA ELECTRONICS CORPORATION