INA1001AC1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INA1001AC1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA1001AC1 is a silicon PNP epitaxial type transistor.
It is designed with high collector current and small V_CE(sat).
FEATURE
・Super mini package for easy mounting
・High collector current(I_C=-500mA)
・Low collector saturation voltage
(V_{CE（sat）}<-0.25V_max；I_C=-100mA、I_B=-10mA)
・High voltage V_CEO=-80V(Type)
OUTLINE DRAWING
2.8
0.65 1.5 0.65
UNIT：mm
①
②
③
APPLICATION
Power supply, Relay drive
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CEO
Collector to Emitter voltage
V_CBO Collector to Base voltage
V_EBO
Emitter to Base voltage
I_C
Collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
RATING
-80
-80
-4
-500
200
＋150
-55～＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
Type Name
AFD
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
ｈ_{ＦＥ1}
ｈ_{ＦＥ2}
V_CE(sat)
f_T
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
I _C=-1mA，I _B=0mA
I _C=-100μA，I _E=0mA
I _E=-100μA，I _C=0mA
V_CB=-80V，I _E =0mA
V_EB=-4V，I _C=0mA
V_CE=-1V，I _C=-10mA
V_CE=-1V，I _C=-100mA
I _C=-100mA，I _B=-10mA
V_CE=-1V，I _E=100mA，f=100MHz
LIMITS
MIN TYP MAX
-80 -
-
-80 -
-
-4
-
-
-
- -0.1
-
- -0.1
95
-
-
95
-
-
-
- -0.3
50
-
-
UNIT
V
V
V
μA
μA
-
-
V
MHz
ISAHAYA ELECTRONICS CORPORATION