2SC5633_09 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION
2SC5633 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high voltage application.
FEATURE
●Low collector to emitter saturation voltage.
VCE(sat)=0.5V max
●Super mini package for easy mounting
APPLICATION
For Hybrid IC, DC-DC converter
〈SMALL-SIGNAL TRANSISTOR〉
2SC5633
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX
1.6
Unit：ｍｍ
1.5
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
MA R K ING
TERMINAL CONNECTER
ï¼¥: EMITTER
ï¼£: COLLECTOR
ï¼¢: BASE
EIAJ : SC-62
JEDEC :
Note)
The dimension without tolerance represent central value.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
300
V
V_CEO Collector to Emitter voltage
300
V
V_EBO Emitter to Base voltage
7
V
I_O
Collector current
100
mA
P_c
Collector dissipation
500
mW
T_j
Junction temperature
＋150
℃
T_stg
Storage temperature
-55～＋150 ℃
MARKING
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CBO
V(BR) EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
I _C=50μA ,I _E=0
I _E=50μA ,I _C=0
I _C=1mA ,R _BE=∞
V _CB=300V, I _E=0mA
V _EB=5V, I _C=0mA
V _CE=10V, I _C=10mA
I _C=100mA ,I_B=10mA
V _CE=6V, I _E=-10mA
V _CB=6V, I _E=0,f=1MHz
TYPE NAME
ＡＪ
LOT No.
ï¼±
ｈ_ＦＥ ITEM
Limits
Unit
Min Typ Max
300
-
-
V
7
-
-
V
300
-
-
V
-
-
0.5 μA
-
-
0.5 μA
60
-
305
-
-
0.5
V
-
40
-
MHz
-
3.0
-
pF
ISAHAYA ELECTRONICS CORPORATION