2SC5482_12 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro

DESCRIPTION
2SC5482 is a silicon NPN epitaxial designed for
relay drive or power supply application.
〈transistor〉
2SC5482
For Low Frequency Power Amplify Application
Silicon NPN Epitaxial Type Micro（Frame type）
OUTLINE DRAWING
4.0
UNIT：mm
0.1
0.45
2.5 2.5
①②③
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
ICM
Peak collector current
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
Ratings
60
6
60
2
1
600
+150
-55～+150
TERMINAL CONNECTOR
①：EMITTER
②：COLLECTOR
③：BASE
EIAJ： -
JEDEC： -
Unit
MARKING
V
V
V
482
A
□□ C
A
mW
hFE Item
℃
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
Limits
Unit
Min Typ Max
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
※
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain ※
C to E Saturation voltage
Gain bandwidth product
Collector output capacitance
I_C= 10μA , I _E= 0mA
I _E=10μA , I_C= 0mA
I_C=2mA , RBE= ∞
V _CB= 50V , I _E= 0mA
V _EB= 4V , I _C= 0mA
V _CE =4V , I_C= 100mA
I_C =500mA , I _B= 25mA
V _CE= 2V , I _E= -10mA
V _CB= 10V , I _E= 0mA,f=1MHz
Item
hFE
60
-
-
V
6
-
-
V
60
-
-
V
-
-
0.2 μA
-
-
0.2 μA
55
-
300
-
-
0.11 0.3
V
-
120
-
MHz
-
14
-
pF
C
D
55～110 90～180
E
150～300
ISAHAYA ELECTRONICS CORPORATION