2SC5398_12 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – For Low Frequency Amplify Application Silicon NPN Epitaxial Type Micro

DESCRIPTION
2SC5398 is a silicon NPN epitaxial type transistor.
It is designed for low frequency voltage amplify
application.
〈transistor〉
2SC5398
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type Micro（Frame type）
OUTLINE DRAWING
UNIT：mm
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
TERMINAL CONNECTOR
①：EMITTER
②：COLLECTOR
③：BASE
EIAJ： -
JEDEC： -
Ratings
Unit
MARKING
50
V
6
V
50
V
100
mA
398
□□ Q
450
mW
+150
-55～+150
℃
Type name
℃
hFE Item
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
V(BR)CEO C to E break down voltage
I_C= 100μA , RBE= ∞
ICBO
Collector cut off current
V _CB= 50V , I _E= 0mA
IEBO
Emitter cut off current
V _EB= 4V , I _C= 0mA
hFE
DC forward current gain ※
V _CE = 6V , I_C= 1mA
hFE
DC forward current gain
V _CE = 6V , I_C= 0.1mA
VCE(sat) C to E Saturation voltage
I_C =30mA , I _B= 1.5mA
fT
Gain bandwidth product
V _CE= 6V , I _E= -10mA
Cob
Collector output capacitance V _CB= 6V , I _E= 0mA,f=1MHz
※：It shows hFE classification at right table.
Item
hFE
Limits
Unit
Min Typ Max
50
-
-
V
-
-
0.5 μA
-
－
0.5 μA
120 (※) 560
-
70
－
-
-
-
-
0.3
V
-
200
-
MHz
-
2.0
-
pF
Q
R
S
120～270 180～390 270～560
ISAHAYA ELECTRONICS CORPORATION