2SC5397_12 Datasheet, PDF (1/6 Pages) Isahaya Electronics Corporation – For High Frequency Amplify, Middle Frequency Amplify Silicon NPN Epitaxial Type Micro

DESCRIPTION
2SC5397 is a silicon NPN epitaxial type transistor.
〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro（Frame type）
OUTLINE DRAWING
UNIT：mm
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
Ratings
30
4
25
30
450
+150
-55～+150
TERMINAL CONNECTOR
①：EMITTER
②：COLLECTOR
③：BASE
EIAJ： -
JEDEC： -
Unit
MARKING
V
V
V
397
mA
□□ B
mW
℃
hFE Item
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
ICBO
Collector cut off current
V _CB= 30V , I _E= 0mA
IEBO
Emitter cut off current
V _EB= 4V , I _C= 0mA
hFE
DC forward current gain ※
V _CE = 6V , I_C= 1mA
fT
Gain bandwidth product
V _CE= 6V , I _E= -1mA
Cob
Collector output capacitance V _CB= 6V , I _E= 0mA,f=1MHz
Ccrb'b Collector- base time constant V _CB=6V, I E=-1mA, f=31.8MHz
NF
Noise figure
V _CE= 6V , I _E= -0.1mA,f=1kHz,RG=2kΩ
※：It shows hFE classification at right table.
Item
B
hFE
35～70
Limits
Unit
Min Typ Max
-
-
1
μA
-
-
1
μA
35
-
300
-
150 200
-
MHz
-
2.0
2.7
pF
-
20
60
pS
3.0
-
dB
C
55～110
D
90～180
E
150～300
ISAHAYA ELECTRONICS CORPORATION