2SC5395_13 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro

DESCRIPTION
2SC5395 is a silicon NPN epitaxial type transistor.
It is designed for low frequency voltage amplify
application.
〈transistor〉
2SC5395
For Low Frequency Power Amplify Application
Silicon NPN Epitaxial Type Micro（Frame type）
OUTLINE DRAWING
4.0
UNIT：mm
0.1
0.45
2.5 2.5
①②③
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Ratings
Unit
50
V
6
V
50
V
200
mA
450
mW
+150
℃
-55～+150
℃
Parameter
Symbol
Test conditions
V(BR)CEO C to B break down voltage
I_C= 100μA , RBE= ∞
ICBO
Collector cut off current
V _CB= 50V , I _E= 0mA
IEBO
Emitter cut off current
V _EB= 6V , I _C= 0mA
hFE
DC forward current gain ※
V _CE = 6V , I_C= 1mA
hFE
DC forward current gain
V _CE = 6V , I_C= 0.1mA
VCE(sat) C to E Saturation Vlotage
I_C = 100mA , I _B= 10mA
fT
Gain bandwidth product
V _CE= 6V , I _E= -10mA
Cob
Collector output capacitance V _CB= 6V , I _E= 0mA,f=1MHz
NF
Noise figure
V _CE= 6V , I _E= -0.1mA,f=1kHz,RG=2kΩ
※：It shows hFE classification at right table.
TERMINAL CONNECTOR
①：EMITTER
②：COLLECTOR
③：BASE
EIAJ： -
JEDEC： -
MARKING
395
□□ F
hFE Item
Limits
Unit
Min Typ Max
50
-
-
V
-
-
0.1 μA
-
-
0.1 μA
150
-
500
-
50
-
-
-
-
-
0.3
V
-
200
-
MHz
-
2.5
-
pF
-
-
15
dB
Item
E
F
hFE
150～300 250～500
ISAHAYA ELECTRONICS CORPORATION