2SC5383 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)

DESCRIPTION
2SC5383 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
OUTLINE DRAWING
Unit：ｍｍ
1.6
0.4
0.8 0.4
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）
●Excellent linearity of DC forward gain.
●Ultra super mini package for easy mounting
①
②
③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
50
V
V_CEO Collector to Emitter voltage
50
V
V_EBO
Emitter to Base voltage
6
V
I_O
Collector current
200
mA
P_c
Collector dissipation
150
mW
T_j
Junction temperature
＋150
℃
T_stg
Storage temperature
-55～＋150 ℃
JEITA：SC-75A
JEDEC：-
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I _C=100μA ,R _BE=∞
V _CB=50V, I _E=0mA
V _EB=6V, I _C=0mA
V _CE=6V, I _C=1mA
※
V _CE=6V, I _C=0.1mA
I _C=100mA ,I_B=10mA
V _CE=6V, I _E=-10mA
V _CB=6V, I _E=0,f=1MHz
V _CE=6V, I _E=-0.1mA,f=1kHz,RG=2kΩ
Limits
Unit
Min Typ Max
50
-
-
V
-
-
0.1 μA
-
-
0.1 μA
150
-
800
90
-
-
-
-
0.3
V
-
200
-
MHz
-
2.5
-
pF
-
-
15
dB
※） It shows hFE classification in below table.
Item
ï¼¥
Ｆ
Ｇ
ｈＦＥ Item
150～300 250～500 400～800
ISAHAYA ELECTRONICS CORPORATION