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2SC4155_11 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE | |||
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DESCRIPTION
2SC4155 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
âSmall collector to emitter saturation voltage.
VCE(sat)=0.3V max
âExcellent linearity of DC forward gain.
âSuper mini package for easy mounting
ãSMALL-SIGNAL TRANSISTORã
2SC4155
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.1
0.425 1.25
0.425
Unitï¼ï½ï½
â
â¡
â¢
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGSï¼Ta=25âï¼
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
50
V
VCEO Collector to Emitter voltage
50
V
VEBO
Emitter to Base voltage
6
V
IC
Collector current
100
mA
PC
Collector dissipation
200
mW
Tj
Junction temperature
ï¼150
â
Tstg
Storage temperature
-55ï½ï¼150 â
TERMINAL CONNECTER
â ï¼BASE
â¡ï¼EMITTER
â¢ï¼COLLECTOR
JEITAï¼SC-70
JEDECï¼ -
MARKING
HR
Type name
hFE Item
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
I C=100μA ,R BE=â
V CB=50V, I E=0mA
V EB=4V, I C=0mA
V CE=6V, I C=1mA
V CE=6V, I C=0.1mA
I C=30mA ,IB=1.5mA
V CE=6V, I E=-10mA
V CB=6V, I E=0mA,f=1MHz
â»ï¼ It shows hFE classification at right table
Item
hFE
Limits
Unit
Min Typ Max
50
-
-
V
-
-
0.5 μA
-
-
0.5 μA
120
-
560
70
-
-
-
-
0.3
V
-
200
-
MHz
-
2.0
-
pF
Q
120ï½270
R
180ï½390
S
270ï½560
ISAHAYA ELECTRONICS CORPORATION
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