2SC4155A_11 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION
2SC4155A is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
2SC4155A
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.1
0.425 ^1.25
0.425
Unit：ｍｍ
①
②
③
APPLICATION
For Hybrid IC, small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS（Ta=25℃）
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-70
JEDEC： -
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
50
V
V_CEO Collector to Emitter voltage
50
V
V_EBO
Emitter to Base voltage
6
V
I_C
Collector current
200
mA
P_c
Collector dissipation
200
mW
T_j
Junction temperature
＋150
℃
T_stg
Storage temperature
-55～＋150 ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
MARKING
H・R
Type name
hFE Item
Parameter
Symbol
Test conditions
Limits
Unit
Min Typ Max
C to E break down voltage
Collector cut off current
V(BR)CEO IC=100μA,RBE=∞
ICBO VCB=50V,IE=0
50
－
－
V
－
－
0.1 μA
Emitter cut off current
IEBO VEB=4V,IC=0
－
－
0.1 μA
DC forward current gain
hFE VCE=6V,IC=1mA
120 (※) 560
－
DC forward current gain
hFE VCE=6V,IC=0.1mA
70
－
－
－
C to E Saturation Vlotage
VCE(sat) IC=100mA,IB=10mA
－
－
0.3
V
Gain bandwidth product
fT
VCE=6V,IE=-10mA
－
200
－
MHz
Collector output capacitance
Cob VCB=6V,IE=0,f=1MHz
－
4
－
pF
Noise Figure
NF
VCE=6V,IE=-0.1mA,f=1kHz,RG=2kΩ
－
－
15
dB
＊： It shows hFE classification at right table
Item
ï¼±
ï¼²
ï¼³
hFE
120～270
180～390
270～560
ISAHAYA ELECTRONICS CORPORATION