2SC4155 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION
2SC4155 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
2SC4155
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Super mini type)
OUTLINE DRAWING
2.1
0.425 1.25 ^0.425
Unit：ｍｍ
①
②
③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA：SC-70
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
50
V
V_CEO Collector to Emitter voltage
50
V
V_EBO
Emitter to Base voltage
6
V
I_O
Collector current
100
mA
P_c
Collector dissipation
200
mW
T_j
Junction temperature
＋150
℃
T_stg
Storage temperature
-55～＋150 ℃
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO I _C=100μA ,R _BE=∞
ICBO
V _CB=50V, I _E=0mA
IEBO
V _EB=4V, I _C=0mA
hFE
V _CE=6V, I _C=1mA
※１
hFE
V _CE=6V, I _C=0.1mA
VCE(sat) I _C=30mA ,I_B=1.5mA
fT
V _CE=6V, I _E=-10mA
Cob
V _CB=6V, I _E=0mA,f=1MHz
Limits
Unit
Min Typ Max
50
-
-
V
-
-
0.5 μA
-
-
0.5 μA
120
-
820
70
-
-
-
-
0.3
V
-
200
-
MHz
-
2.0
-
pF
※） It shows hFE classification in below table.
Item
ｈＦＥ Item
ï¼±
120~270
ï¼²
180~390
ï¼³
270~560
ï¼´
390~820
ISAHAYA ELECTRONICS CORPORATION