2SC3928_11 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION

DESCRIPTION
2SC3928 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
2SC3928
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.8
0.65
1.5
Unit：ｍｍ
0.65
①
②
③
APPLICATION
For Hybrid IC, small type machine low frequency voltage
Amplify application.
TERMINAL ONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-59
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
50
V
V_CEO Collector to Emitter voltage
50
V
V_EBO
Emitter to Base voltage
6
V
I_C
Collector current
100
mA
P_C
Collector dissipation
200
mW
T_j
Junction temperature
＋150
℃
T_stg
Storage temperature
-55～＋150 ℃
MARKING
HQ
Type name
hFE Item
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
I _C=100μA ,R _BE=∞
V _CB=50V, I _E=0mA
V _EB=4V, I _C=0mA
V _CE=6V, I _C=1mA
V _CE=6V, I _C=0.1mA
I _C=30mA ,I_B=1.5mA
V _CE=6V, I _E=-10mA
V _CB=6V, I _E=0mA,f=1MHz
※： It shows hFE classification at right table.
Item
hFE
Limits
Unit
Min Typ Max
50
-
-
V
-
-
0.5 μA
-
－
0.5 μA
120 (※) 560
70
－
-
-
-
0.3
V
-
200
-
MHz
-
2.0
-
pF
ï¼±
120～270
ï¼²
180～390
ï¼³
270～560
ISAHAYA ELECTRONICS CORPORATION