2SC3928A_11 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION
2SC3928A is super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
Complementary with ISA1530AC1.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
2SC3928A
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.8
0.65
1.5
0.65
Unit：ｍｍ
①
②
③
APPLICATION
For Hybrid IC, small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
50
V
V_CEO Collector to Emitter voltage
50
V
V_EBO
Emitter to Base voltage
6
V
I_C
Collector current
200
mA
P_C
Collector dissipation
200
mW
T_j
Junction temperature
＋150
℃
T_stg
Storage temperature
-55～＋150 ℃
TERMINAL CONNECTER
①：BASE
②：EMITTER
JEITA：SC-59
③：COLLECTOR
MARKING
H・R
Type name
hFE Item
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise Figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
IC=100μA,RBE=∞
VCB=50V,IE=0
VEB=4V,IC=0
VCE=6V,IC=1mA
VCE=6V,IC=0.1mA
IC=100mA,IB=10mA
VCE=6V,IE=-10mA
VCB=6V,IE=0,f=1MHz
VCE=6V,IE=-0.1mA,f=1kHz,RG=2kΩ
Limits
Unit
Min Typ Max
50
－
－
V
－
－
0.1 μA
－
－
0.1 μA
120 (※) 560
－
70
－
－
－
－
－
0.3
V
－
200
－
MHz
－
4
－
pF
－
－
15
dB
※： It shows hFE classification at right table.
Item
Q
R
S
hFE
120～270 180～390 270～560
ISAHAYA ELECTRONICS CORPORATION