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2SA2166_08 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE | |||
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2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor
designed with high collector current, low VCEï¼satï¼.
FEATURE
âHigh collector current
ICï¼MAXï¼=-500mA
âLow collector to emitter saturation voltage
VCEï¼satï¼<-0.4Vmax(IC=-150mAãIB=-15mAï¼
OUTLINE DRAWING
Unitï¼mm
2.5
0.5
1.5
0.5
â
â¢
â¡
APPLICATION
For switching application, small type motor drive application.
MAXIMUM RATINGSï¼Ta=25âï¼
è¨å·
VCEO
VCBO
VEBO
IC
PC
Tj
Tstg
é
ç®
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
å®æ ¼å¤
-60
-60
-5
-500
200
150
-55ï½150
åä½
V
V
V
mA
mW
â
â
Notice: The dimension without
tolerance represent central
value.
TERMINAL CONNECTOR
â ï¼BASE
EIAJï¼SC-59
â¡ï¼EMITTER
JEDECï¼TO-236
â¢ï¼COLLECTOR
Resemblance
MARKING
Type Name
Aã»W
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Parameter
Test condition
Vï¼BRï¼CEO
Vï¼BRï¼CBO
Vï¼BRï¼EBO
ICBO
IEBO
hFE
VCEï¼satï¼
VBEï¼satï¼
fT
Cob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
IC=-1mAãIB=0
IC=-10uAãIE=0
IE=-10uAãIC=0
VCB=-50VãIE=0
VEB=-3VãIC=0
IC=-150mAãVCE=-10V
IC=-150mAãIB=-15mA
IC=-150mAãIB=-15mA
IE=50mAãVCE=-20Vãf=100MHz
VCB=-10Vãf=1MHz
Limits
Unit
Min Typ Max
-60
V
-60
V
-5
V
-100 nA
-100 nA
100
300 ---
-0.4
V
-1.3
V
200
MHz
8
pF
ISAHAYA ELECTRONICS CORPORATION
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