2SA2166 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor
designed with high collector current, low V_{CE（sat）.}
FEATURE
●High collector current
I_{C（MAX）}=-500mA
●Low collector to emitter saturation voltage
V_{CE（sat）}<-0.4V_max(IC=-150mA、IB=-15mA）
OUTLINE DRAWING
Unit：mm
2.5
0.5
1.5
0.5
①
③
②
APPLICATION
For switching application, small type motor drive application.
MAXIMUM RATINGS（Ta=25℃）
記号
V_CEO
V_CBO
V_EBO
I_C
P_C
T_j
T_stg
項
目
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
定格値
-60
-60
-5
-500
200
150
-55～150
単位
V
V
V
mA
mW
℃
℃
Notice: The dimension without
tolerance represent central
value.
TERMINAL CONNECTOR
①：BASE
EIAJ：SC-59
②：EMITTER
JEDEC：TO-236
③：COLLECTOR
Resemblance
MARKING
Type Name
A・W
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
Test condition
V_{（BR）CEO}
V_{（BR）CBO}
V_{（BR）EBO}
I_CBO
I_EBO
h_FE
V_{CE（sat）}
V_{BE（sat）}
f_T
C_ob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
IC=-1mA、IB=0
IC=-10uA、IE=0
IE=-10uA、IC=0
VCB=-50V、IE=0
VEB=-3V、IC=0
IC=-150mA、VCE=-10V
IC=-150mA、IB=-15mA
IC=-150mA、IB=-15mA
IE=50mA、VCE=-20V、f=100MHz
VCB=-10V、f=1MHz
Limits
Unit
Min Typ Max
-60
V
-60
V
-5
V
-100 nA
-100 nA
100
300 ---
-0.4
V
-1.3
V
200
MHz
8
pF
ISAHAYA ELECTRONICS CORPORATION
20050621