|
2SA1603A Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) | |||
|
DESCRIPTION
2SA1603A is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
âSmall collector to emitter saturation voltage.
VCE(sat)=-0.3V max
âExcellent linearity of DC forward gain.
âSuper mini package for easy mounting
ãSMALL-SIGNAL TRANSISTORã
2SA1603A
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
OUTLINE DRAWING
2.1
0.425 1.25 0.425
Unitï¼ï½ï½
â
â¡
â¢
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITAï¼SC-70
MAXIMUM RATINGSï¼Ta=25âï¼
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
-60
V
VCEO Collector to Emitter voltage
-50
V
VEBO
Emitter to Base voltage
-6
V
IO
Collector current
-150
mA
Pc
Collector dissipation
200
mW
Tj
Junction temperature
ï¼150
â
Tstg
Storage temperature
-55ï½ï¼150 â
TERMINAL CONNECTER
â ï¼BASE
â¡ï¼EMITTER
â¢ï¼COLLECTOR
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO I C=-100μA ,R BE=â
ICBO V CB=--60V, I E=0mA
IEBO
V EB=-6V, I C=0mA
hFE
V CE=-6V, I C=-1mA
â»
hFE
V CE=-6V, I C=-0.1mA
VCE(sat) I C=-30mA ,IB=-1.5mA
fT
V CE=-6V, I E=10mA
Cob
V CB=-6V, I E=0,f=1MHz
Limits
Unit
Min Typ Max
-50
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
120
-
560
70
-
-
-
-
-0.3
V
-
200
-
MHz
-
2.5
-
pF
â»ï¼ It shows hFE classification in below table.
Item
ï½ï¼¦ï¼¥ Item
ï¼±
120~270
ï¼²
180~390
ï¼³
270~560
ISAHAYA ELECTRONICS CORPORATION
|
▷ |