2SA1530A Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION
2SA1530A is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
〈SMALL-SIGNAL TRANSISTOR〉
2SA1530A
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Ultra super mini type)
OUTLINE DRAWING
Unit：ｍｍ
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3Vmax（@Ic=-100mA、IB=-10mA）
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA：SC-59
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
-60
V
V_CEO Collector to Emitter voltage
-50
V
V_EBO
Emitter to Base voltage
-6
V
I_O
Collector current
-150
mA
P_c
Collector dissipation
200
mW
T_j
Junction temperature
＋150
℃
T_stg
Storage temperature
-55～＋150 ℃
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I_C= -100μA , RBE= ∞
V _CB= -60V , I _E= 0mA
V _EB= -4V , I _C= 0mA
V _CE = -6V , I_C= -1mA
V _CE = -6V , I_C= -0.1mA
I _C= -100mA , I _B= -10mA
V _CE= -6V , I _E= 10mA
V _CB= -6V , I _E= 0mA,f=1MHz
V _CE= -6V , I _E= 0.3mA,f=100Hz,RG=10kΩ
Limits
Unit
Min Typ Max
-50
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
120
-
560
-
70
-
-
-
-
-
-0.3
V
-
200
-
MHz
-
4
-
pF
-
-
20
dB
※） It shows hFE classification in below table.
Item
Q
R
S
ｈＦＥ Item
120～270 180～390 270～560
ISAHAYA ELECTRONICS CORPORATION