2SA1365_10 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
2SA1365
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
2SA1235 is a super mini silicon NPN epitaxial type
transistor designed with high collector current,small Vce(sat).
Complementary with 2SC3440.
.
OUTLINE DRAWING
Unit：ｍｍ
FEATURE
●Low collector to emitter saturation voltage.
VCE(sat)=-0.2V typ
●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting.
●High collector current ICM=-1A
●High gain band width product fT=180MHz typ
APPLICATION
Small type motor drive, relay drive, power supply.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
-25
V
V_EBO Emitter to Base voltage
-4
V
V_CEO Collector to Emitter voltage
-20
V
I _CM
Peak Collector current
-1
A
I_C
Collector current
-700
mA
200
P_C
Collector dissipation (Ta=25℃)
※350
mW
T_j
Junction temperature
＋125
℃
T_stg
Storage temperature
※package mounted on substrate.
-55～＋125 ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
JEITA：SC-59
JEDEC：Similar to TO-236
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
Note)
The dimension without tolerance represent central value.
TYPE NAME
hFE ITEM
Parameter
Symbol
Test conditions
Limits
Unit
Min Typ Max
C to B break down voltage
V(BR)CBO
E to B break down voltage
V(BR)EBO
C to E break down voltage
V(BR)CEO
Collector cut off current
ICBO
Emitter cut off current
IEBO
DC forward current gain
hFE
C to E Saturation Vlotage
VCE(sat)
Gain band width product
fT
※） It shows hFE classification in below table
I _C=-10μA , I _E=0
I _E=-10μA , I _C=0
I _C=-100μA ,R _BE=∞
V _CB=-25V, I _E=0
V _EB=-2V, I _C=0
V _CE=-4V, I _C=-100mA
I _C=-500mA ,I_B=-25mA
V _CE=-6V, I _E=10mA
-25
-
-
V
-4
-
-
V
-20
-
-
V
-
-
-1 μA
-
-
-1 μA
150
-
800
-
-0.2 -0.5
V
100 180
-
MHz
Marking
hFE
AE
150 to 300
AF
250 to 500
AG
400 to 800
.
ISAHAYA ELECTRONICS CORPORATION