IRGP30B60KD-EPBF_15 Datasheet, PDF (9/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGP30B60KD-EP
10
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= i/Ri
R_2R2
τ_Cτ
τ_{2 τ2}
Ri (°C/W) τi (sec)
0.200 0.000428
0.209 0.013031
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= i/Ri
R_2R2
τ_{2 τ2}
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 0.205 0.000136}
τ_{3 τ3}
0.505 0.001645
0.567 0.037985
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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