IRF7335D1PBF Datasheet, PDF (9/12 Pages) International Rectifier – Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode

IRF7335D1PbF
+
‚
-

R_G
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-^„ +
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
• dv/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* V_GS = 5V for Logic Level Devices
Fig. 31 Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET^® Power MOSFETs
* V_GS=10V
V_DD
I_SD
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig. 32 Gate Charge Waveform
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