ST223S Datasheet, PDF (8/10 Pages) International Rectifier – INVERTER GRADE THYRISTORS Stud Version

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ST223S Series
On-state Conduction
Parameter
V_TM Max. peak on-state voltage
V_T(TO)1 Low level value of threshold
voltage
V_T(TO)2 High level value of threshold
voltage
r_t1
Low level value of forward
slope resistance
r_t2
High level value of forward
slope resistance
I_H
Maximum holding current
I_L
Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
t_d
Typical delay time
t_q
Max. turn-off time
Blocking
Parameter
dv/dt
I_RRM
I_DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST223S
1.58
1.05
Units Conditions
I_TM= 600A, T_J = T_J max, t_p = 10ms sine wave pulse
V
(16.7% x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J max.
1.09
(I > π x I_T(AV)), T_J = T_J max.
0.88
0.82
600
1000
(16.7% x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J max.
mΩ
(I > π x I_T(AV)), T_J = T_J max.
mA ^{TJ = 25°C, IT > 30A}
T_J = 25°C, V_A= 12V, Ra = 6Ω, I_G= 1A
ST223S Units Conditions
1000
0.78
Min Max
10 20
A/µs
µs
T_J = T_J max, V_DRM = rated V_DRM
I_TM = 2 x di/dt
T_J = 25°C, V_DM = rated V_DRM, I_TM = 50A DC, t_p= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T_J = T_J max, I_TM = 300A, commutating di/dt = 20A/µs
V_R = 50V, t_p = 500µs, dv/dt: see table in device code
ST223S
500
40
Units Conditions
V/µs
T_J = T_J max., linear to 80% V_DRM, higher value
available on request
mA T_J = T_J max., rated V_DRM/V_RRM applied
Triggering
Parameter
P_GM Maximum peak gate power
P_G(AV) Maximum average gate power
I_GM Max. peak positive gate current
+V_GM Maximum peak positive
gate voltage
-V_GM Maximum peak negative
gate voltage
I_GT Max. DC gate current required
to trigger
V_GT Max. DC gate voltage required
to trigger
I_GD Max. DC gate current not to trigger
V_GD Max. DC gate voltage not to trigger
ST223S
60
10
10
20
5
Units Conditions
W T_J = T_J max, f = 50Hz, d% = 50
A
T_J = T_J max, t_p ≤ 5ms
V
T_J = T_J max, t_p ≤ 5ms
200
3
20
0.25
mA
T_J = 25°C, V_A = 12V, Ra = 6Ω
V
mA
V
T_J = T_J max, rated V_DRM applied
D-483
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