SD453N25S20PC Datasheet, PDF (8/10 Pages) International Rectifier – FAST RECOVERY DIODES

SD453N/R Series
Bulletin I2076 rev. A 09/94
6
800
SD453N/R..S20 Series
5. 5
T_J= 150 °C; V r > 100V
700
5
600
4. 5
I FM = 1000 A
500
Sine Pulse
4
400
500 A
3. 5
150 A
300
I _FM = 1000 A
Sine Pulse
500 A
150 A
3
200
2. 5
2
10
100
SD453N/R..S20 Series
T_J = 150 °C; V _r > 100V
0
100
1000
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs)
450
I _FM = 1000 A
400
Sine Pulse
350
500 A
300
150 A
250
200
150
100
SD453N/R..S20 Series
50
T_J = 150 °C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Fig. 20 - Recovery Current Characteristics
7
SD453N/R..S30 Series
6.5
T_J = 150 °C, Vr > 100V
6
5.5
5
I FM = 1000 A
Sine Pulse
4.5
500 A
4
150 A
3.5
3
2.5
2
10
100
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
1200
1000
800
600
400
I _FM = 1000 A
Sine Pulse
500 A
150 A
200
SD453N/R..S30 Series
T_J = 150 °C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
550
500
I _FM = 1000 A
450
Sine Pulse
400
500 A
350
150 A
300
250
200
150
100
SD453N/R..S30 Series
T_J = 150 °C; V _r > 100V
50
0
0 50 100 150 200 250 300
Rate Of Fall Of F orward Current - di/dt (A/µs)
Fig. 21 - Recovery Time Characteristics Fig. 22 - Recovery Charge Characteristics Fig. 23 - Recovery Current Characteristics
1E4
1E4
2
1
0.6
0.4
10 joules per pulse
46
1E3
0.2
0.1
1E2
1E1
SD453N/R..S20 Series
Sinusoidal Pulse
TJ = 150°C, VRRM = 800V
tp
dv/dt = 1000V/µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics
8
1000
1500
600
400
200
100
50 Hz
2000
1E3
3000
4000
6000
SD453N/R..S20 Series
Sinusoidal Pulse
TC= 70°C, VRRM = 800V
tp
dv/dt = 1000V/us
10000
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 25 - Frequency Characteristics
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