IRHNA57163SE Datasheet, PDF (8/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

IRHNA57163SE, JANSR2N7472U2
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 0.1 mH
Peak IL = 75A, VGS = 12V
 ISD ≤ 75A, di/dt ≤ 280A/µs,
VDD ≤ 130V, TJ ≤ 150°C
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
104 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: [phone]
TAC Fax: [phone]
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
www.irf.com