IRG4PC30UD Datasheet, PDF (8/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

IRG4PC30UD
+Vge
90% Vge
80%
of Vce
Same type
device as
D .U .T .
430µF
D .U .T .
Ic ^{10% Vce}
td(off)
Vce
90% Ic
Ic
5% Ic
tf
∫ ^t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
I_LM, E_on, E_off(diode), t_rr, Q_rr, I_rr, t_d(on), t_r, t_d(off), t_f
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
E_off, t_d(off), t_f
10% +Vg
G ATE VO LTA G E D .U .T.
+Vg
Vce
10% Ic
Vcc
90% Ic
td(on)
5% Vce
tr
t1
DUT VOLTAGE
AND CURRENT
Ipk
Ic
∫ ^t2
E on = Vce ie dt
t1
t2
trr
Ic
tx
10% Vcc
Vpk
Irr
DIO DE REVE RSE
RECOVERY ENERGY
t3
trr
∫ Q rr = id dt
tx
10% Irr
Vcc
DIODE RECOVERY
W AVEFORMS
∫ ^t4
Erec = Vd id dt
t3
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E_on, t_d(on), t_r
8
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E_rec, t_rr, Q_rr, I_rr
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