IRG4BC10SD-S Datasheet, PDF (8/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

IRG4BC10SD-S/L
Same type
device as
D .U .T .
80%
of Vce
430µF
D .U .T .
V_ge
V_C
90%
Fig. 18a - Test Circuit for Measurement of
I_LM, E_on, E_off(diode), t_rr, Q_rr, I_rr, t_d(on), t_r, t_d(off), t_f
I_C ^5%10%
t _d(on)
10%
90%
t _d(off)
tr
t_f
E_on
Eoff
E _ts = (E_on +E_off )
t=5µs
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
E_off, t_d(off), t_f
10% +Vg
G ATE VO LTA G E D .U .T.
+Vg
Vce
10% Ic
Vcc
90% Ic
td(on)
5% Vce
tr
t1
DUT VOLTAGE
AND CURRENT
Ipk
Ic
∫ ^t2
E on = VVcceeieIcdtdt
t1
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E_on, t_d(on), t_r
8
trr
Ic
tx
10% Vcc
Vpk
Irr
trr
∫ Q rr = iIdcddt t
tx
10% Irr
Vcc
DIODE RECOVERY
W AVEFORMS
DIO DE REVE RSE
RECOVERY ENERGY
t3
∫ ^t4
E rec = VVddidIcdt dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E_rec, t_rr, Q_rr, I_rr
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