IRFB16N60LPBF Datasheet, PDF (8/9 Pages) International Rectifier – SMPS MOSFET

IRFB16N60LPbF
D.U.T
+
‚
-

R_G
Peak Diode Recovery dv/dt Test Circuit
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Circuit Layout Considerations
• Low Stray Inductance
ƒ
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
„
-
+
• dv/dt controlled by R_G
• Driver same type as D.U.T.
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
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- ^VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V _*
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 16. For N-Channel HEXFET^® Power MOSFETs
8
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