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IRF9910PBF-1_15 Datasheet, PDF (8/11 Pages) International Rectifier – Industry-standard pinout SO-8 Package | |||
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IRF9910TRPbF-1
+
Â
-
Â
RG
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
Â
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
-
⢠Low Leakage Inductance
Current Transformer
-Â +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
VDD
+
⢠ISD controlled by Duty Factor "D"
-
⢠D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ⤠5%
* VGS = 5V for Logic Level Devices
Fig 30. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 31. Gate Charge Waveform
8
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
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