IRF6706S2TRPBF Datasheet, PDF (8/10 Pages) International Rectifier – DirectFET Power MOSFET

IRF6706S2TR/TR1PbF
+
‚
-
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R_G
D.U.T
+
ƒ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-^„ +
• di/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
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• D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
* V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 19. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET^® Power MOSFETs
DirectFET™ Board Footprint, S1 Outline (Small Size Can).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G=GATE
D=DRAIN
S=SOURCE
D
D
GS
D
D
8
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