IRF624PBF Datasheet, PDF (8/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF624PbF
Peak Diode Recovery dv/dt Test
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Circuit Layout Consider-
ations
• Low Stray Inductance
• Ground Plane
-
+
-
-
+
• dv/dt controlled by R_G
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• I_SD controlled by Duty Factor
-
* Reverse Polarity for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
V_DD
I_SD
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
Fig. 14 For N and P Channel HEXFETS
8
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