IRKTF112 Datasheet, PDF (7/8 Pages) International Rectifier – FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

160
IRK.F112.. Series
140 ^{T J = 125 °C}
120
I_TM = 500 A
300 A
200 A
100
100 A
80
60
50 A
40
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 9 - Reverse Recovery Charge Characteristics
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
140
IRK.F112.. Series
120 ^{T J = 125 °C}
I _TM= 500 A
100
300 A
200 A
100 A
80
50 A
60
40
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
1E4
tp
1E3
1E2
1E1
IRK.F112.. Series
Sinusoidal Pulse
T _C= 90 °C
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V _D = 80% V _DRM
150
400
1000
2500
5000
50 Hz
Snubber circuit
R _s = 47 ohms
C s = 0.22 µF
V _D= 80% V _DRM
50 Hz
150
400
1000
2500
5000
IRK.F112.. Series
Sinusoidal Pulse
tp
T_C = 60 °C
1E2
1E3
1E14E41E11E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
1E4
IRK.F112.. Series
Trapezoidal Pulse
tp
T _C= 90°C, di/dt 50A/µs
Snubber circuit
R _s = 47 ohms
C _s = 0.22 µF
V _D = 80% V _DRM
IRK.F112.. Series
Trapezoidal Pulse
tp
T C= 90°C, di/dt 100A/µs
Snubber circuit
R s = 22 ohms
C s = 0.15 µF
V _D = 80% V DRM
50 Hz
1E3
150
400
1000
2500
5000
2500
1000
50 Hz
150
400
5000
1E2
1E1
1E2
1E3
1E14E41E11E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
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