IRGP30B60KD-E Datasheet, PDF (7/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

50
45
40
35
30
25
20
15
10
5
0
0
RG ₌ 4.7Ω
RG ₌ 10Ω
RG ₌ 22Ω
RG ₌ 47Ω
RG ₌ 100Ω
20
40
60
80
IF (A)
Fig. 17 - Typical Diode I_RR vs. I_F
T_J = 150°C
IRGP30B60KD-E
50
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
RG (Ω)
Fig. 18 - Typical Diode I_RR vs. R_G
T_J = 150°C; I_F = 30A
50
45
40
35
30
25
20
15
10
5
0
0
500
1000
diF /dt (A/µs)
1500
Fig. 19- Typical Diode I_RR vs. di_F/dt
V_CC= 400V; V_GE= 15V;
I_F= 30A; T_J = 150°C
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5000
4000
3000
10Ω
4.7Ω
60A
22Ω
47Ω
30A
100 Ω
2000
15A
1000
0
0
500
1000
1500
diF /dt (A/µs)
Fig. 20 - Typical Diode Q_RR
V_CC= 400V; V_GE= 15V;T_J = 150°C
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