IRG7PH50K10DPBF_15 Datasheet, PDF (7/12 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

10000
1000
Cies
100
Coes
Cres
10
0
100 200 300 400 500 600
VCE (V)
Fig. 24 - Typ. Capacitance vs. V_CE
1
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
16
14
VCES = 600V
VCES = 400V
12
10
8
6
4
2
0
0 40 80 120 160 200 240
Q _G, Total Gate Charge (nC)
Fig. 25 - Typical Gate Charge vs. V_GE
I_CE = 35A
0.1
0.01
0.001
0.0001
1E-006
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
_{J J}
_{1 1}
R _{1R 1}
Ci= iRi
Ci= iRi
R _{2R 2}
_{2 2}
R _{3R 3}
_{3 3}
R _{4R 4}
_{4 4}
_CC
Ri(°C/W)
0.0149
0.0670
0.1384
0.0908
i (sec)
0.00005
0.00017
0.00422
0.02614
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
_{J J}
_{1 1}
R _{1R 1}
R _{2R 2}
_{2 2}
R _{3R 3}
_{3 3}
R _{4R 4}
_{4 4}
_CC
Ri(°C/W)
0.0108
0.5322
0.5460
i (sec)
0.00001
0.00041
0.00340
Ci= iRi
Ci= iRi
0.3107
0.02493
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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March 12, 2014