IRG7PH37K10DPBF Datasheet, PDF (7/12 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

10000
1000
Cies
100
Coes
Cres
10
0
100 200 300 400 500 600
VCE (V)
Fig. 24 - Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
1
IRG7PH37K10DPbF/IRG7PH37K10D-EPbF
16
14
VCES= 600V
12
VCES= 400V
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90
Q _G, Total Gate Charge (nC)
Fig. 25 - Typical Gate Charge vs. V_GE
I_CE = 15A
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
_{J J}
_{1 1}
R_1R1
Ci= iRi
Ci= iRi
R_2R2
_{2 2}
R_3R3
_{3 3}
_CC
Ri (°C/W)
0.188011
0.253666
0.138770
i (sec)
0.000442
0.003268
0.018312
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1 _{D = 0.50}
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
_{J J}
_{1 1}
R _{1R 1}
Ci= iRi
Ci= iRi
R_2R2
_{2 2}
0.001
Ri (°C/W)
R _{3R 3}
R_4R4
0.071695
_{CC 0.552034}
_{3 3}
_{4 4}
0.729153
i (sec)
0.000069
0.000250
0.003117
0.358475 0.020215
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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November 4, 2013