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IRG4IBC30UD Datasheet, PDF (7/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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160
VR = 2 0 0 V
TJ = 125°C
TJ = 25°C
120
IF = 24A
IF = 12A
80
IF = 6.0A
40
IRG4IBC30UD
100
VR = 2 0 0 V
TJ = 125°C
TJ = 25°C
IF = 24A
10
I F = 12A
IF = 6.0A
0
100
1000
dif /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
600
VR = 2 0 0 V
TJ = 125°C
TJ = 25°C
1
100
1000
dif /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 2 0 0 V
TJ = 125°C
TJ = 25°C
400
1000
IF = 6.0A
IF = 24A
200
IF = 12A
IF = 6.0A
IF = 12A
100
IF = 24A
0
100
1000
dif /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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10
100
1000
d i f /d t - (A/µ s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
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