IRG4BC20UD Datasheet, PDF (7/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

100
V_R = 2 0 0 V
T_J = 125°C
T_J = 25°C
80
60
40
I_F = 4.0A
20
I_F = 16 A
I_F = 8.0A
IRG4BC20UD
100
V_R = 2 0 0 V
T_J = 125°C
T_J = 25°C
10
I_F = 8.0A
I_F = 16A
I_F = 4.0A
0
100
1000
dif /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. di_f/dt
500
V_R = 2 0 0 V
T_J = 125°C
T_J = 25°C
400
1
100
1000
di _f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. di_f/dt
10000
V_R = 2 0 0 V
T_J = 125°C
T_J = 25°C
300
I_F = 16A
200
I_F = 8.0A
100
I_F = 4.0A
0
100
1000
di_f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. di_f/dt
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I_F = 4.0A
1000
I_F = 8.0A
I_F = 16A
100
100
1000
di_f /dt - (A/µs)
Fig. 17 - Typical di_(rec)M/dt vs. di_f/dt
7