IRG4BC10KPBF Datasheet, PDF (7/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

50
I_F = 8.0A
45
I_F = 4.0A
40
35
30
25
V_R = 200V
T_J = 125°C
T_J = 25°C
20
100
di _f /dt - (A/µs)
1000
Fig. 14 - Typical Reverse Recovery vs. di_f/dt
200
V_R = 200V
T_J = 125°C
T_J = 25°C
160
I_F = 8.0A
120
I_F = 4.0A
IRG4BC10KDPbF
14
V_R = 200V
T_J = 125°C
12 ^{TJ = 25°C}
I _F = 8.0A
10
I_F = 4.0A
8
6
4
2
0
100
1000
di_f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. di_f/dt
1000
V_R = 200V
T_J = 125°C
T_J = 25°C
I _F = 8.0A
I F = 4.0A
80
40
0
100
1000
di _f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. di_f/dt
www.irf.com
100
100
di _f /dt - (A/µs)
Fig. 17 - Typical di_(rec)M/dt vs. di_f/dt,
A
1000
7