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IRFR9210PBF Datasheet, PDF (7/10 Pages) International Rectifier – HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0Ω , ID = -1.9A ) | |||
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IRFR/U9210PbF
Peak Diode Recovery dv/dt Test Circuit
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Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
⢠Low Leakage Inductance
Current Transformer
-
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-
-
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⢠dv/dt controlled by RG
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⢠ISD controlled by Duty Factor "D"
⢠D.U.T. - Device Under Test
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* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ⤠5%
VDD
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14 For P Channel HEXFETS
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