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IRFB4215PBF Datasheet, PDF (7/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFB4215PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Â
-
+
Circuit Layout Considerations
⢠Low Stray Inductance
Â
⢠Ground Plane
⢠Low Leakage Inductance
Current Transformer
-
Â
-
+
Â
RG
VGS
⢠dv/dt controlled by RG
⢠ISD controlled by Duty Factor "D"
⢠D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ⤠5%
[ VDD]
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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