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IRF8313PBF_15 Datasheet, PDF (7/10 Pages) International Rectifier – Fully Characterized Avalanche Voltage and Current | |||
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IRF8313PbF
+
Â
-
Â
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Â
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
-
⢠Low Leakage Inductance
Current Transformer
-Â +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
VDD
+
⢠ISD controlled by Duty Factor "D"
-
⢠D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ⤠5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
Id
Vgs
L
VCC
DUT
0
210KK
S
Vds
Vgs(th)
Fig 17a. Gate Charge Test Circuit
www.irf.com
Qgodr
Qgd Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
7
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