IRF7905TRPBF Datasheet, PDF (7/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL

IRF7905PbF
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ
τJ
τ1
τ1
R1
R1
R2
R2
τ2
τ2
Ci= τi/Ri
Ci i/Ri
R3 R4 _{Ri (°C/W)} τι _(sec)
R3
R4
τa ^{2.195355 0.000149}
τ3 _τ3
τ4
τ4
8.470326 0.019287
36.46787 0.63002
15.37789 15.12
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
τJ
τJ
τ1
τ1
R1_R1
R2_R2
τ_{2 τ2}
Ci= τi/Ri
Ci i/Ri
R3_R3
R4
R4
Ri (°C/W) τι (sec)
τa ^{2.073115 0.000216}
τ3 _τ3
τ4
τ4
9.069028 0.028592
36.96639 0.75582
14.40736 21
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
L
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 _D1
C_o
C_in
V_o
GND
V_in
Fig 27. Layout Diagram
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