IRF7902PBF Datasheet, PDF (7/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7902PbF
1000
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
0.1
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= τi/Ri
R_2R2
τ_{2 τ2}
R_3R3
R_4R4
Ri (°C/W) τi (sec)
τ_{Aτ 3.031518 0.000064}
τ_{3 τ3}
τ_{4 τ4}
7.306226 0.005879
51.39689 0.44864
28.2607 12.37
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
100
D = 0.50
10
0.20
0.10
0.05
0.02
1
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
R_1R1
R_2R2
R_3R3
R_{4R4 Ri (°C/W) τi (sec)}
τ_{J τJ}
τ_{Aτ 2.445866 0.000118}
τ_{1 τ1}
τ_{2 τ2}
τ_{3 τ3}
τ_{4 τ4}
9.382382 0.020778
33.63681 0.70843
Ci= τi/Ri
Ci= τi/Ri
17.05217 24.5
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
Fig 27. Layout Diagram
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