|
IRF7493PBF Datasheet, PDF (7/9 Pages) International Rectifier – HEXFET® Power MOSFET | |||
|
◁ |
IRF7493PbF
+
Â
-
Â
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Â
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
-
⢠Low Leakage Inductance
Current Transformer
-Â +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
VDD
+
⢠ISD controlled by Duty Factor "D"
-
⢠D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ⤠5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 17. Gate Charge Waveform
www.irf.com
7
|
▷ |