SI4410DYPBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET®Power MOSFET

Si4410DYPbF
0.20
0.03
0.16
0.12
0.02
0.08
V_GS = 10V
0.01
V_GS = 4.5V
0.04
I _D = 10A
0.00
0
A
10
20
30
40
50
I_D , Drain Current (A)
0.00
3
A
4
5
6
7
8
9
10
V _GS , Gate-to-Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 13. Typical On-Resistance Vs. Gate
Voltage
3.0
1000
ID
TOP
4.5A
8.0A
800
BOTTOM 10A
2.5
600
I_D =250µA
400
2.0
200
1.5
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 14. Typical Threshold Voltage Vs.Temperature
6
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
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