IRS2609DSPBF_11 Datasheet, PDF (6/25 Pages) International Rectifier – HALF-BRIDGE DRIVER

IRS2609DSPbF
Application Information and Additional Details
Informations regarding the following topics are included as subsections within this section of the datasheet.
• IGBT/MOSFET Gate Drive
• Switching and Timing Relationships
• Deadtime
• Matched Propagation Delays
• Shut down Input
• Input Logic Compatibility
• Undervoltage Lockout Protection
• Shoot-Through Protection
• Integrated Bootstrap Functionality
• Negative VS Transient SOA
• PCB Layout Tips
• Integrated Bootstrap FET limitation
• Additional Documentation
IGBT/MOSFET Gate Drive
The IRS2609D HVICs are designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several parameters
associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the gate of the power switch, is
defined as IO. The voltage that drives the gate of the external power switch is defined as VHO for the high-side power switch and VLO
for the low-side power switch; this parameter is sometimes generically called VOUT and in this case does not differentiate between the
high-side or low-side output voltage.
V_B
(or V_CC)
HO
(or LO)
V_S
(or COM)
I_O+
+
V_HO (or V_LO)
-
Figure 1: HVIC sourcing current
V_B
(or V_CC)
HO
(or LO)
I_O-
V_S
(or COM)
Figure 2: HVIC sinking current
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