IRLB8721PBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET

IRLB8721PbF
32
28
ID = 31A
24
20
16
TJ = 125°C
12
8
TJ = 25°C
4
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 13b. Unclamped Inductive Test Circuit
V_DS
V_GS
R_G
R_D
D.U.T.
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 14a. Switching Time Test Circuit
6
400
ID
TOP
5.4A
10A
300
BOTTOM 25A
200
100
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 13a. Maximum Avalanche Energy
vs. Drain Current
V_(BR)DSS
tp
I_AS
Fig 13c. Unclamped Inductive Waveforms
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 14b. Switching Time Waveforms
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