IRGP4740DPBF_15 Datasheet, PDF (6/12 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

17
16
RG ₌ 10Ω
15
RG ₌ 22Ω
14
13
RG ₌ 47Ω
12
11
RG ₌ 100Ω
10
10 15 20 25 30 35 40 45 50
IF (A)
Fig. 18 - Typ. Diode I_RR vs. I_F
T_J = 175°C
17
16
15
14
13
12
11
10
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typ. Diode I_RR vs. di_F/dt
V_CC = 400V; V_GE = 15V; I_F = 24A; T_J = 175°C
400
300
200 ^{RG = 10Ω}
RG = 22Ω
100 ^{RG = 47Ω}
RG = 100Ω
0
0
10
20
30
40
50
IF (A)
Fig. 22 - Typ. Diode E_RR vs. I_F
T_J = 175°C
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IRGP4740DPbF/IRGP4740D-EPbF
17
16
15
14
13
12
11
10
0
20
40
60
80
100
RG (Ω)
Fig. 19 - Typ. Diode I_RR vs. R_G
T_J = 175°C
2.5
48A
2.0
22Ω
10Ω
47Ω
24A
1.5 _100Ω
12A
1.0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 21 - Typ. Diode Q_RR vs. di_F/dt
V_CC = 400V; V_GE = 15V; T_J = 175°C
21
140
18
Tsc
Isc
120
15
100
12
80
9
60
6
40
3
20
8
10
12
14
16
18
VGE (V)
Fig. 23 - V_GE vs. Short Circuit Time
V_CC = 400V; T_C = 150°C
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November 13, 2014