IRGBF30F Datasheet, PDF (6/6 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)

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IRGBF30F
6.0 _{RG = 22 Ω}
T _C = 150°C
5.0 ^{VCC = 720V}
V_GE = 15V
4.0
3.0
2.0
1.0
0.0
0
5
10
15
20
25
I _C , C o llector-to -E m itte r Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
V_GGEE= 20 V
T_J = 125°C
SAFE OP ER ATIN G AR EA
10
1
0.1
1
10
100
1000
V_CE , C olle ctor-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix F: Section D - page D-8
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
C-248
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