IRG7PH30K10DPBF Datasheet, PDF (6/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG7PH30K10DPbF
18
16
14
12
10
8
0
100
200
300
400
diF /dt (A/µs)
Fig. 19 - Typ. Diode I_RR vs. di_F/dt
V_CC = 600V; V_GE = 15V; I_F = 9.0A; T_J = 150°C
1200
1000
800
RG = 5.0Ω
RG = 10Ω
RG = 20Ω
RG = 47Ω
600
400
0
5
10
15
20
IF (A)
Fig. 21 - Typ. Diode E_RR vs. I_F
T_J = 150°C
10000
1000
Cies
100
Coes
10
Cres
1
0
100 200 300 400 500
VCE (V)
Fig. 23 - Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
6
3000
2500
2000
1500
18A
10Ω
20Ω
47Ω
9.0A
5.0Ω
1000
0
4.5A
100
200
300
400
diF /dt (A/µs)
Fig. 20 - Typ. Diode Q_RR vs. di_F/dt
V_CC = 600V; V_GE = 15V; T_J = 150°C
48
60
40
50
Tsc
32
40
Isc
24
30
16
20
8
10
8
10
12
14
16
VGE (V)
Fig. 22 - V_GE vs. Short Circuit Time
V_CC = 600V; T_C = 150°C
16
VCES = 600V
14
VCES = 400V
12
10
8
6
4
2
0
0
10
20
30
40
50
Q _G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. V_GE
I_CE = 9.0A; L = 600µH
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