IRFR4104PBF Datasheet, PDF (6/12 Pages) International Rectifier – HEXFET® Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mΩ , ID = 42A )

IRFR/U4104PbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
600
ID
TOP
9.2A
500
13A
BOTTOM 42A
400
300
200
100
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
3.0
ID = 250µA
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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